Broadband Photodetectors: Broadband Bi 2 O 2 Se Photodetectors from Infrared to Terahertz (Adv. Funct. Mater. 14/2021)

In article number 2009554, Man Luo, Peng Wang, Zhiming Huang, and co-workers demonstrate a room-temperature 2D Bi2O2Se photodetector with ultrafast (476 ns) and ultralow noise (0.2 pW Hz−1/2) for broadband detection. In the infrared regions, the nonequilibrium carriers result from photo-induced electron-hole pairs in Bi2O2Se. While in the THz region, the nonequilibrium electrons are injected from the metal electrodes to Bi2O2Se by the electromagnetic induced well under the THz wave.