14Nm Fin Sadp Patterning Processes and Integration

This paper describes the development of a Self-Aligned Double Patterning (SADP) scheme for advanced technology node 14 nm Fin. The process development focus on profile tuning and pitch walking reduction. This study has achieved a tunable fully integrated SAPD process flow, which has met all key specs for 14nm Fin patterning. This study established an technical foundation which can be used in other key SADP applications and a platform for extending our patterning process capability to SAQP(Self-Aligned Quadruple Patterning) for advanced technology nodes.