材料科学
蓝宝石
光电子学
位错
化学气相沉积
光致发光
金属有机气相外延
紫外线
宽禁带半导体
衍射
金属
光电探测器
外延
光学
图层(电子)
复合材料
激光器
冶金
物理
作者
B. N. Pantha,R. Dahal,M. L. Nakarmi,Neeraj Nepal,J. Li,J. Y. Lin,H. X. Jiang,Qing Paduano,David Weyburne
摘要
AlN epilayers were grown by metal organic chemical vapor deposition on sapphire substrates. X-ray diffraction measurements revealed that the threading dislocation (TD) density, in particular, the edge TD density, decreases considerably with increasing the epilayer thickness. Photoluminescence results showed that the intensity ratio of the band edge emission to the defect related emission increases linearly with increasing the epilayer thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep ultraviolet (DUV) photodetectors decreases drastically with the AlN epilayer thickness. The results suggested that one effective way for attaining DUV optoelectronic devices with improved performance is to increase the thickness of the AlN epilayer template, which results in the reduction of the TD density.
科研通智能强力驱动
Strongly Powered by AbleSci AI