材料科学
无定形固体
辐照
光电子学
紫外线
锆
电阻式触摸屏
纳米技术
结晶学
电气工程
物理
工程类
核物理学
化学
冶金
作者
Lingwei Li,Yuanqing Chen,Xiaoru Yin,Song Yang,Na Li,Jinfen Niu,Huimin Wu,Wenwen Qu
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2017-11-09
卷期号:28 (48): 485707-485707
被引量:9
标识
DOI:10.1088/1361-6528/aa91bd
摘要
We demonstrate a low-cost and facile photochemical solution method to prepare the ZrO2 resistive switching arrays as memristive units on flexible PET/ITO substrates. ZrO2 solution sensitive to UV light of 337 nm was synthesized using zirconium n-butyl alcohol as the precursor, and benzoylacetone as the complexing agent. After the dip-coated ZrO2 gel films were irradiated through a mask under the UV lamp (with wavelength of 325-365 nm) at room temperature and rinsed in ethanol, the ZrO2 gel arrays were obtained on PET/ITO substrates. Subsequently, the ZrO2 gel arrays were irradiated by deep UV light of 254 and 185 nm at 150 °C, resulting in the amorphous ZrO2 memristive micro-arrays. The ZrO2 units on flexible PET/ITO substrates exhibited excellent memristive properties. A high ratio of 104 of on-state and off-state resistance was obtained. The resistive switching behavior of the flexible device remained stable after being bent for 103 times. The device showed stable flexibility up to a minimum bending diameter of 1.25 cm.
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