材料科学
晶体管
静电放电
电压
整流器(神经网络)
光电子学
电气工程
硅
电子线路
低压
半导体
纳米技术
热传导
工程物理
计算机科学
物理
工程类
机器学习
循环神经网络
复合材料
随机神经网络
人工神经网络
作者
Yibo Jiang,Hui Bi,Hui Li
标识
DOI:10.1142/s0217984918400729
摘要
The bulk fin field-effect transistor (FinFET) has been the primary semiconductor technology in nanotechnology. To protect low supply voltage circuits based on FinFET, trigger voltage [Formula: see text] of the silicon controlled rectifier (SCR) which acts as electrostatic discharge (ESD) protection device should be lowered further. In this paper, in order to lower the [Formula: see text] an extra implant technique is proposed to form bridging well low trigger voltage FinFET SCR (FinFET BRLVTSCR). The experiments demonstrate that the trigger voltage can be lowered effectively. Moreover, the TCAD simulations bring an in-depth physical understanding of ESD current conduction and failure mechanism during ESD protection. Finally, the turn-on characteristic demonstrates proposed novel SCRs are fast and effective under TLP and very fast TLP (VFTLP) stress.
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