与非门
德拉姆
计算机科学
非易失性随机存取存储器
计算机硬件
动态随机存取存储器
电容器
非易失性存储器
闪存
闪光灯(摄影)
存储单元
门阵列
逻辑门
嵌入式系统
半导体存储器
计算机存储器
电气工程
晶体管
工程类
电压
内存刷新
算法
物理
光学
现场可编程门阵列
作者
Seungmin Lee,Byoungdeog Choi
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2022-12-01
卷期号:43 (12): 2089-2092
被引量:4
标识
DOI:10.1109/led.2022.3213660
摘要
This letter proposes a novel capacitor-less dynamic random-access memory composed of a 3D stacked cell array. To perform selective program and erase operations in the 3D cell array, a back-gate-sharing and channel-separating architecture are adopted. The operation of the unit cell is demonstrated through 3D technology computer-aided design simulations. The proposed device uses a simple process to optimize the back gate (e.g., modifying the thickness of materials or using different types of materials). Through optimization of the back gate, a sensing margin and retention time of 52 $\mu \text{A}$ and 475 ms, respectively, are achieved at 300 K in a scaled cell with a gate length of 30 nm and channel radius of 30 nm. Because this device has a cell array similar to that of a 3D NAND flash memory, it can be manufactured using the same process and equipment in a cost-effective manner. In addition, it can be adopted in processing-in-memory applications to provide high-performance and high-density hybrid memory functionality when used in conjunction with NAND flash memories.
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