单层
材料科学
纳米技术
晶界
外延
薄脆饼
单晶
过渡金属
晶体生长
基质(水族馆)
光电子学
工程物理
结晶学
化学
冶金
图层(电子)
催化作用
工程类
生物化学
微观结构
海洋学
地质学
作者
Jitendra Kumar Singh,Herlin Pujiarti,Meng‐Lin Tsai,Manikandan Venkatesan,Chi‐Ching Kuo,Chan‐Shan Yang,Hung‐Wei Yen
标识
DOI:10.1002/advs.202307839
摘要
Abstract Due to extraordinary electronic and optoelectronic properties, large‐scale single‐crystal two‐dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit‐making cutting‐edge nano and atomic‐scale devices. To explore the remarkable properties of single‐crystal 2D monolayers, many strategies are proposed to achieve ultra‐thin functional devices. Despite substantial attempts, the controllable growth of high‐quality single‐crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large‐scale single‐crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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