Two-dimensional Optoelectronic Memristive Device Realized by Ferroelectric Regulation

Optoelectronic memristive devices offer significant advantages in brain-like intelligent computers in an energy-efficient manner. However, photon-electron coupling and memristive plasticity, two critical factors in defining performance, are strongly limited by optoelectronic memristive materials and device stricture. To overcome it, a two-dimensional photodetector defined by a ferroelectric with field effect transistors (FET) structure is constructed to perform the device operation. The p-type BP channels provide a broadband optical response for the device, and its resistance has been strategically modulated by tailoring the energy band structure and electron transport through ferroelectric HfZrO ₄ (HZO) regulation. As a result, the optoelectronic memristive device can demonstrate outstanding electrical properties and synaptic functions, encompassing long-term potentiation (LTP) and long-term depression (LTD), paired-pulse facilitation (PPF). This work demonstrates the advantage of optoelectronic and memristive integration for synergistic modulation and reveals the great potential of BP in optoelectronic memristive devices.