期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2022-09-22卷期号:43 (11): 1949-1952被引量:3
标识
DOI:10.1109/led.2022.3208855
摘要
Developing the multi-valued logic circuits, that can handle more data than the conventional binary logic circuits, is a promising strategy to break through the well-known Moore’s law. In this letter, we demonstrate quaternary logic circuits, for the first time, based on the four-level organic thin-film transistor nonvolatile memories (OTFT-NVMs) as the core components. High-performance four-level OTFT-NVMs are achieved, with the low programming/erasing voltages of ±15 V, high mobility up to 7.4 cm2/Vs, reliable endurance, and stable retention capabilities. By connecting the four-level OTFT-NVMs with a load resistance in the reasonable ways, we build the logic circuits to reliably perform quaternary logic operations of NOT, NAND and NOR, respectively. Our works lay the foundation to develop the novel quaternary integrated circuits in hardware.