Design and simulation of a high performance Ag3CuS2 jalpaite-based photodetector

This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband Ag3CuS2 photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS2 and BaSi2 semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers. Also, the intricate interactions between WS2/Ag3CuS2 and Ag3CuS2/BaSi2 interface properties of the photodetector are explored. The Ag3CuS2-based PD remarkably produces the best outcomes with an open-circuit voltage of 0.74 V, current of 43.79 mA/cm2, responsivity of 0.79 AW-1 and detectivity of 4.73 × 1014 Jones and over 90 % QE in the NIR range for the Ag3CuS2 PD. The results showcase this jalpaite material as a promising one in the field of PD.