暗电流
电流(流体)
焊剂(冶金)
物理
红外线的
电子
截止频率
切断
航程(航空)
凝聚态物理
光电子学
材料科学
光学
光电探测器
热力学
量子力学
冶金
复合材料
标识
DOI:10.1007/s11664-023-10715-0
摘要
Rule-22 is an update to Rule-07 with higher accuracy in the low 1/λT regime (1/λT < 0.0025) and accurately predicting dark current in the high 1/λT regime (1/λT > 0.0025), where Rule-07 deviates significantly from predicting dark current. Rule-22 accurately predicts state-of-the-art HgCdTe dark current performance of non-Auger-suppressed devices over 20 orders of magnitude, covering all wavelength ranges from near-infrared to very long-wave infrared, and a temperature range from 20 K to 330 K without cutoff correction. This study shows that in the low 1/λT regime (1/λT < 0.0025), devices are limited by diffusion currents, and in the mid-range 1/λT, where 0.0025 < 1/λT < 0.005, an electron trap at ET = 0.39 Eg limits the performance of p-on-n devices. We also show that for 1/λT higher than 0.005, the dark current of state-of-the-art HgCdTe devices are limited by very low background flux at 3.7 ph/cm2/s. Further advancement in reduction of defects associated with traps and background flux will improve dark current for 1/λT > 0.0025.
科研通智能强力驱动
Strongly Powered by AbleSci AI