Abstract The interface between the perovskite and electron‐transporting material is often treated for defect passivation to improve the photovoltaic performance of devices. A facile 4‐Acetamidobenzoic acid (containing an acetamido, a carboxyl, and a benzene ring)‐based molecular synergistic passivation (MSP) strategy is developed here to engineer the SnO x /perovskite interface, in which dense SnO x are prepared using an E‐beam evaporation technology while the perovskite is deposited with vacuum flash evaporation deposition method. MSP engineering can synergistically passivate defects at the SnO x /perovskite interface by coordinating with Sn 4+ and Pb 2+ with functional group CO in the acetamido and carboxyl. The optimized solar cell devices can achieve the highest efficiency of 22.51% based on E‐Beam deposited SnO x and 23.29% based on solution‐processed SnO 2 , respectively, accompanied by excellent stability exceeding 3000 h. Further, the self‐powered photodetectors exhibit a remarkably low dark current of 5.22 × 10 −9 A cm −2 , a response of 0.53 A W −1 at zero bias, a detection limit of 1.3 × 10 13 Jones, and a linear dynamic range up to 80.4 dB. This work proposes a molecular synergistic passivation strategy to enhance the efficiency and responsivity of solar cells and self‐powered photodetectors.