异质结
材料科学
光电子学
堆积
外延
半导体
带偏移量
纳米技术
带隙
化学
价带
有机化学
图层(电子)
作者
Rui Ge,Beituo Liu,Fengrui Sui,Yufan Zheng,Yilun Yu,Kaiqi Wang,Ruijuan Qi,Rong Huang,Fangyu Yue,Junhao Chu,Chun‐Gang Duan
出处
期刊:Small
[Wiley]
日期:2024-08-18
卷期号:20 (47)
被引量:2
标识
DOI:10.1002/smll.202404965
摘要
2D van der Waals (vdW) layered semiconductor vertical heterostructures with controllable band alignment are highly desired for nanodevice applications including photodetection and photovoltaics. However, current 2D vdW heterostructures are mainly obtained via mechanical exfoliation and stacking process, intrinsically limiting the yield and reproducibility, hardly achieving large-area with specific orientation. Here, large-area vdW-epitaxial SnSe
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