退火(玻璃)
成核
材料科学
硅
分子动力学
氢
纳米尺度
结晶学
离子注入
晶体缺陷
纳米技术
化学物理
光电子学
计算化学
化学
冶金
热力学
离子
物理
有机化学
作者
Bing Wang,Bin Gu,Rongying Pan,Sijia Zhang,Jianhua Shen
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2015-03-01
卷期号:36 (3): 036003-036003
被引量:1
标识
DOI:10.1088/1674-4926/36/3/036003
摘要
Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut® technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.
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