普尔-弗伦克尔效应
绝缘体(电)
凝聚态物理
材料科学
金属
肖特基势垒
肖特基二极管
弗伦克尔缺陷
光电子学
物理
薄膜
纳米技术
晶体缺陷
二极管
冶金
出处
期刊:Physical Review
[American Physical Society]
日期:1967-03-15
卷期号:155 (3): 657-660
被引量:773
标识
DOI:10.1103/physrev.155.657
摘要
Existing experimental data on the bulk conductivity of ${\mathrm{Ta}}_{2}$${\mathrm{O}}_{5}$ and SiO films are shown to be consistent with the Schottky effect rather than the Poole-Frenkel effect. A discussion of the physical properties of vacuum-deposited insulators has led to a simple model in which the insulator is proposed to contain neutral traps and donor centers. This model is shown to resolve the above-mentioned "anomalous" Poole-Frenkel effect. Other simple models are discussed, but they do not exhibit the anomalous Poole-Frenkel effect.
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