过饱和度
增长率
形态学(生物学)
材料科学
沟槽
分析化学(期刊)
结晶学
化学
纳米技术
色谱法
几何学
地质学
有机化学
古生物学
数学
图层(电子)
作者
Takeshi Mitani,Naoyoshi Komatsu,Tomoyuki Takahashi,Tomohisa Kato,Kuniharu Fujii,Toru Ujihara,Yuji Matsumoto,K. Kurashige,Hajime Okumura
标识
DOI:10.1016/j.jcrysgro.2013.11.031
摘要
The growth rate and surface morphology of 4H–SiC crystals prepared by solution growth with Si1−xCrx and Si1−x−yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H–SiC crystals was suppressed using Si1−x−yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 µm/h. Conversely, trench-like defects were observed in crystals grown with Si1−xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1−x−yCrxAly solvents was maintained at lower levels than that obtained using Si1−xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.
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