撞击电离
电离
雪崩光电二极管
原子物理学
电子电离
散射
热电离
元素的摩尔电离能
电子雪崩
材料科学
电子
电场
电离能
化学
物理
离子
光学
核物理学
有机化学
探测器
量子力学
作者
K. Taguchi,T. Torikai,Yoshimasa Sugimoto,Kikuo Makita,H. Ishihara
摘要
Impact ionization coefficients for electrons and holes in InP were measured experimentally at 25–175 °C in the 400–600 kV/cm electric field range with planar avalanche photodiodes, in which the n-InP avalanche region was separated from the light absorbing InGaAs and/or InGaAsP layers. α and β monotonically decreased with elevated temperatures; β/α slightly decreased with increasing temperature. Comparison of the experimental results with Okuto–Crowell formula on the impact ionization coefficient gave the phonon energy ERO=46 meV and the phonon scattering mean free path λ0=41.7 Å for electron impact ionization and ERO=36 meV and λ0=41.3 Å for hole impact ionization, respectively. Curves calculated by using these parameters agree with the experimental results quite satisfactorily at each temperature.
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