米曲霉
量子点
材料科学
细胞毒性
赫拉
锌
半导体
纳米技术
光电子学
化学
细胞
冶金
有机化学
酶
生物化学
体外
作者
Xian Huang,Xiaoxia Li,Yitong Yao,Na Liu,Zhong Chen,Quanmao Yü
出处
期刊:NANO
[World Scientific]
日期:2023-01-12
卷期号:18 (02)
被引量:1
标识
DOI:10.1142/s1793292023500066
摘要
ZnS:6.25%Br quantum dots (QDs) were fabricated by a low temperature solid phase way. The impacts of zinc vacancies ([Formula: see text]) and Br on the energetic and electronic properties of ZnS QDs were discussed by the first-principles calculations combined with the experimental results. Moreover, the cytotoxicity of ZnS:Br QDs and their influences on the growth of Aspergillus oryzae (A. oryzae) were researched. The theoretical results showed that ZnS:6.25%Br and ZnS:3.125%[Formula: see text] were n-type and p-type semiconductor, respectively, while ZnS:6.25%Br,3.125%[Formula: see text] was a neutral semiconductor. It was found that ZnS:6.25%Br QDs were not only nontoxic for HeLa cells but also promoted the growth of A. oryzae. This work will provide a new method for improving the growth of A. oryzae.
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