材料科学
太赫兹辐射
电磁屏蔽
半金属
极化子
薄膜
Dirac(视频压缩格式)
干扰(通信)
光电子学
电磁干扰
凝聚态物理
纳米技术
物理
带隙
复合材料
电信
电子
量子力学
计算机科学
频道(广播)
中微子
作者
Yingyu Guo,Zhong‐Qiang Chen,Zuanming Jin,Xuefeng Wang,Chao Zhang,A. V. Balakin,A. P. Shkurinov,Yan Peng,Yiming Zhu,Songlin Zhuang
标识
DOI:10.1002/adfm.202407749
摘要
Abstract Terahertz (THz) electromagnetic interference (EMI) shielding materials is crucial for ensuring THz electromagnetic protection and information confidentiality technology. Here, it is demonstrated that high electrical conductivity and strong absorption of THz electromagnetic radiation by type‐II Dirac semimetal PdTe 2 film make it a promising material for EMI shielding. Compared to MXene film, a commonly used metallic 2D material, the PdTe 2 film demonstrates a remarkable 40.36% increase in average EMI shielding efficiency per unit thickness within a broadband THz frequency range. Furthermore, it is demonstrated that a photoinduced long life‐time THz transparency in Dirac semimetal PdTe 2 films is attributed to the formation of small polarons due to the strong electron‐phonon coupling. A 15 nm‐thick PdTe 2 film exhibits a photoinduced change of EMI SE of 1.1 dB, a value exceeding three times that measured on MXene film with a similar pump fluence. This work provides insights into the fundamental photocarrier properties in type‐II Dirac semimetals that are essential for designing advanced THz optoelectronic devices.
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