Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers

Theoretically, tandem quantum-dot light-emitting diodes (QLEDs) hold great promise for achieving both high efficiency and high stability in display applications. However, in practice, their operational stability remains considerably inferior to that of state-of-the-art devices. In this study, we developed a new tandem structure with optimal electrical and optical performance to simultaneously improve the efficiency and stability of tandem QLEDs. Electrically, upon development of a barrier-free interconnecting layer enabled by an indium-zinc oxide bridging layer and a conductive ZnMgO layer, the driving voltage of the tandem QLEDs is remarkably reduced. Optically, upon development of a top-emitting structure and optimization of the cavity length guided by a theoretical simulation, a maximum light extraction efficiency is achieved. As a result, the red tandem QLEDs exhibit a maximum external quantum efficiency of 49.01% and a