Spin Wave Driven Skyrmionium based Transistor with PMA Barrier

Spin wave is one of the most prominent driving mechanisms for designing nanoscale spintronic devices. It generates less heat than electric current due to the fact that there is no movement of charged particles. Hence, spin-wave driven devices are immune to Joule heating that is often present in traditional electronic devices. In this paper, it is demonstrated that spin wave driven skyrmionium is able to achieve transistor functionality by employing a perpendicular magnetic anisotropy (PMA) barrier on a nanotrack. This PMA barrier creates different energy state within the barrier region that is responsible for pinning of the skyrmionium. Moreover, the velocity of the skyrmionium is approximately 30% higher than the skyrmion. This is due to the fact that skyrmionium have net zero topological charge so there is no transversal deflection. In order to facilitate the proper functioning, it is necessary to consider the amplitude and frequency of the excitation field within a specific range. The proposed device, that functions as a transistor by employing microwave fields with frequencies of 80 GHz and amplitudes of 0.6T without modifying the edges of the nanotrack, has the potential for developing future non-charge-based spintronic circuits.