荧光粉
材料科学
半最大全宽
光电子学
发光二极管
量子效率
近红外光谱
热稳定性
二极管
发射强度
发射光谱
带隙
红外线的
发光
光学
谱线
化学工程
工程类
物理
天文
作者
Hongshi Zhang,Jiyou Zhong,Fu Du,Lei Chen,Xiaoli Zhang,Zhongfei Mu,Weiren Zhao
标识
DOI:10.1021/acsami.2c00200
摘要
Broad-band near-infrared (NIR) phosphors are essential to assembling portable NIR light sources for applications in spectroscopy technology. However, developing inexpensive, efficient, and thermally stable broad-band NIR phosphors remains a significant challenge. In this work, a phosphate, KAlP2O7, with a wide band gap and suitable electronic environment for Cr3+ equivalent substitution was selected as the host material. The synthesized KAlP2O7:Cr3+ material exhibits a broad-band emission covering 650-1100 nm with a peak centered at 790 nm and a full width at half-maximum (fwhm) of 120 nm under 450 nm excitation. The internal quantum efficiency (IQE) was determined to be 78.9%, and the emission intensity at 423 K still maintains 77% of that at room temperature, implying the high efficiency and excellent thermal stability of this material. Finally, a NIR phosphor-converted light-emitting diode (pc-LED) device was fabricated by using the as-prepared material combined with a 450 nm blue LED chip, which presents a high NIR output power of 32.1 mW and excellent photoelectric conversion efficiency of 11.4% under a drive current of 100 mA. Thus, this work not only provides an inexpensive broad-band NIR material with high performance for applications in NIR pc-LEDs but also highlights some strategies to explore this class of materials.
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