二极管
浪涌
光电子学
肖特基二极管
材料科学
击穿电压
物理
电压
量子力学
气象学
作者
Jingcun Liu,Ruizhe Zhang,Ming Xiao,Subhash Pidaparthi,Hao Cui,Andrew Edwards,Lek Baubutr,Cliff Drowley,Yuhao Zhang
出处
期刊:IEEE Transactions on Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2021-10-01
卷期号:36 (10): 10959-10964
被引量:47
标识
DOI:10.1109/tpel.2021.3067019
摘要
This letter reports the avalanche and surge current ruggedness of the industry's first 1.2-kV-class vertical GaN p-n diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN p-n diodes with a 1.39-mm 2 device area and an avalanche breakdown voltage of 1589 V show a critical avalanche energy density of 7.6 J/cm 2 in unclamped inductive switching tests, as well as a critical surge current of 54 A and a critical surge energy density of 180 J/cm 2 in 10-ms surge current tests. All these values are the highest reported in vertical GaN devices and comparable to those of commercial SiC p-n diodes and merged p-n Schottky diodes. These GaN p-n diodes show significantly smaller reverse recovery compared to SiC p-n diodes, revealing less conductivity modulation in n-GaN. The negative temperature coefficient of differential on-resistance and the anticlockwise surge I–V locus are believed to be due to the increased acceptor ionization in p-GaN and the decreased contact resistance at high temperatures. These results suggest a high ruggedness of GaN p-n junctions with small bipolar currents and fast switching capabilities. As the first electrothermal ruggedness data for industry's vertical GaN devices, these results provide key new insights for the development of vertical GaN devices as well as their application spaces.
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