A phosphoric acid (H 3 PO 4 )-polyvinyl alcohol (PVA) electrolyte was demonstrated as a gate dielectric for electrolyte-gated field-effect transistors (EGFETs). These devices exhibited high performance with sub 1 V operation, a high ON/OFF ratio >10 5 and a low subthreshold swing of 90 mV/decade. The results show the strong viability of proton conducting polymer electrolytes as gate dielectrics which open the door for further development of low-power EGFETs.