材料科学
毯子
电阻率和电导率
散射
纳米线
激光线宽
体积分数
凝聚态物理
复合材料
光电子学
光学
电气工程
物理
工程类
激光器
作者
T. Nogami,Oleg Gluschenkov,Yasir Sulehria,S. Nguyen,Huai Huang,Nicholas A. Lanzillo,Anuja DeSilva,Yann Mignot,Jennifer Church,Shing Yip Lee,Prasad S. Bhosale,R. Patlolla,Devika Sil,H. Shobha,James J. Kelly,Juntao Li,J. Demarest,A. Simon,L. A. Clevenger,Brown Peethala Dan Edelstein,Bala Haran
标识
DOI:10.1109/iitc47697.2020.9515628
摘要
Feasibility of single damascene Cu BEOL nanowires with TaN/Ta barrier (i.e. omitting a CVD-Co liner) was studied. Successful Cu gap-fill in 36 nm pitch trenches demonstrated 30% line resistance (Line-R) reduction vs. leading-edge Cu with conventional TaN/Co liner. This was attributed to larger Cu volume fraction and 15% lower intrinsic Cu resistivity. In order to assess the Line-R crossover point, comparable Ru nanowires were estimated through analysis of electron scattering components, based on Rs of blanket Ru films. The calculation predicts Line-R of subtractive-etched Ru lines (larger grains) crosses conventional Cu with TaN/Co liner at 12 nm linewidth, but never crosses Cu with TaN/Ta liner. Analysis of electron scattering components shows the resistivity of Ru lines will be dominated by grain boundary scattering, suggesting that the key for subtractive-etched Ru wires crossing over Cu would be innovations that enhance grain growth of blanket Ru films.
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