凝聚态物理
铁磁性
材料科学
散射
磁电阻
自旋转向
量子隧道
自旋(空气动力学)
磁性半导体
半导体
自旋电子学
自旋极化
物理
磁场
光电子学
电子
光学
量子力学
热力学
出处
期刊:Journal of Functional Materials and Devices
日期:2009-01-01
摘要
Considering the effect of the interface spin-flip scattering,the spin-injection across ferromagnet /nonmagnetic-semiconductor/ferromagnet heterostuctures with finite size was explored theoretically.Due to the fact that interfacial spin-flip scattering leads to spin-memory losses at the interfaces,the spin-up component of spin-polarized current could not be continuous across the interface.It is found that when the spin injection efficiency varies from zero to unity,the tunneling magnetoresistance of the ferromagnet/nonmagnetic-semiconductor/ferromagnet junction presents two orders of changes in magnitude,which reflects the fact that the spin-flip scattering at the interface directly affects the tunneling magnetoresistance of ferromagnet/nonmagnetic-semiconductor/ ferromagnet.
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