双折射
材料科学
紫外线
激光器
光电子学
带隙
二次谐波产生
光刻
光学
半导体
光学材料
物理
作者
T. Thao Tran,Hongwei Yu,James M. Rondinelli,Kenneth R. Poeppelmeier,P. Shiv Halasyamani
标识
DOI:10.1021/acs.chemmater.6b02366
摘要
Deep ultraviolet (absorption edge <200 nm, band gap >6.2 eV) nonlinear optical (NLO) materials are of current interest owing to their technological applications and materials design challenges. Technologically, the materials are used in laser systems, atto-second pulse generation, semiconductor manufacturing, and photolithography. Designing and synthesizing a deep UV NLO material requires crystallographic non-centrosymmetry, a wide UV transparency range, a large second-harmonic generating coefficient (dij > 0.39 pm/V), moderate birefringence (Δn ∼ 0.07), chemical stability and resistance to laser damage, and ease in the growth of large high-quality single crystals. This review examines the known deep UV NLO materials with respect to their crystal structure, band gap, SHG efficiency, laser damage threshold, and birefringence. Finally, future directions with respect to new deep UV NLO materials are discussed.
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