石墨烯
透射率
纳米结构
薄板电阻
光电子学
纳米技术
材料科学
箔法
复合数
导电体
复合材料
图层(电子)
作者
Meng Lu,Xiaoling Zhang,Wanying Yin,Yao Wang,Dezeng Li,Qingbiao Zhao
标识
DOI:10.1002/ejic.202200779
摘要
Abstract Graphene is one of the most prevailing materials to replace traditional transparent conductive films (TCFs). In order to improve the performance of graphene TCFs, it is proposed to directly deposit graphene on insulating substrates via assisted catalysis of Cu foil to avoid intricate transfer process, and further effectively enhance the optical performance by introducing the close‐packed antireflection array nanostructure. The graphene TCFs grown on bare quartz substrates have sheet resistance of 0.766 kΩ sq −1 and transmittance of 86.83 %. Graphene composite TCFs with transmittance of 95.79 % were obtained by introducing the close‐packed solid/hollow SiO 2 nanospheres antireflection array nanostructure. Compared with graphene TCFs, transmittance of graphene composite TCFs increased significantly, while the sheet resistance remained at the same level. This method combining direct synthesis technique with novel antireflection array nanostructure provides a significant design idea to grow transfer‐free graphene with controllable optoelectronic properties and promotes the application and development of the future electronic devices.
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