Bilayer 3R-Stacked MoS2 dual-gate transistor

The stacking configuration of multilayers in van der Waals materials is a brand-new degree of freedom to tune the optical and electronic properties of two-dimensional materials. Here, the natural 3R-stacked MoS₂ was synthesized via chemical vapor transport (CVT) method. The mobility of bilayer reaches as high as 8.6 cm² V^-1 s^-1. The field-effect transistor (FET) demonstrates a current on/off ratio over 10⁸ and a sharp subthreshold swing (SS) value of 69 mV per dec. The 3R-stacked MoS₂ will be an excellent candidate for the application of electronic device.