带隙基准
电源抑制比
阈下传导
CMOS芯片
电气工程
MOSFET
双极结晶体管
材料科学
电压基准
光电子学
阈值电压
晶体管
电压
工程类
跌落电压
放大器
作者
Reza Papi,Fereidoon Hashemi Noshahr,Benoît Gosselin
标识
DOI:10.1109/newcas57931.2023.10198158
摘要
A new CMOS MOSFET-only bandgap voltage reference that operates at low voltage, provides low power, and is insensitive to temperature changes, is presented in this paper. To save chip area and simplify the design, the circuit is implemented with subthreshold MOSFETs instead of bulky Bipolar junction transistors (BJT). The circuit, designed using 130 nm CMOS technology, generates a voltage reference of 593 mV and a temperature coefficient of 7S ppm in the range of-2 $0^{\circ}\mathrm{C}$ to $90^{\circ}\mathrm{C}$, without trimmings. Post-layout simulation results show that the circuit achieves a high power supply rejection ratio (PSRR) of -87dB at low frequencies. The proposed circuit draws a current of 3.7 $\mu$A from a 1.2 V power supply.
科研通智能强力驱动
Strongly Powered by AbleSci AI