材料科学
异质结
肖特基二极管
光电子学
肖特基势垒
工程物理
二极管
工程类
作者
Jian-Sian Li,Chiao-Ching Chiang,Hsiao-Hsuan Wan,Madani Labed,J. Park,You Seung Rim,Meng-Hsun Yu,F. Ren,Yu‐Te Liao,S. J. Pearton
摘要
Schematic of hybrid Schottky and Junction Barrier Schottky Ga 2 O 3 rectifiers. Breakdown voltage increased as the proportion of heterojunction area did, from 1.2 kV for Schottky rectifiers to 6.2 kV for pure heterojunction devices.
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