材料科学
薄脆饼
碳化硅
光电子学
基质(水族馆)
工程物理
多晶硅
硅
功率半导体器件
纳米技术
图层(电子)
电气工程
冶金
工程类
地质学
电压
海洋学
薄膜晶体管
作者
Hugo Biard,Sidoine Odoul,W. Schwarzenbach,Ionut Radu,Christophe Maleville,Alexandre Potier,Marc Ferrato,Eric Guajioty
出处
期刊:Solid State Phenomena
日期:2023-06-06
卷期号:344: 47-52
被引量:2
摘要
Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for a wide range of applications in the frame of high-power electronics, notably in the 600 to 3,300V. The last decades have shown a continuous and impressive improvement in both 4H-SiC wafer size and quality. Nevertheless, the availability of such wafers remains a challenge for the SiC power industry. In the last three years, Soitec has successfully adapted the Smart Cut™ technology to Silicon Carbide, resulting in the integration of a thin layer of high quality 4H-SiC on an ultra-low resistivity 3C p-SiC handle wafer. The so-called SmartSiC™ offers a drastic yield improvement for the whole industry thanks to the multiple times re-use of the 4H-SiC donor wafer, as well as an improvement of the device’s electrical performance, especially thanks to the ultra-low resistivity polycrystalline silicon carbide (p-SiC). The latter being specially developed to enhance the new SmartSiC™ substrate capabilities. In this paper, we present the work done by Mersen and Soitec to tailor the p-SiC properties, and thus the SmartSiC™ ones including such material.
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