材料科学
堆栈(抽象数据类型)
固态
化学工程
核工程
工程物理
计算机科学
操作系统
工程类
作者
Jihoon Oh,Deok Ho Kwon,Seung Ho Choi,Nohjoon Lee,Yeeun Sohn,Taegeun Lee,Tae Yong Lee,Ji Young Kim,Ki Yoon Bae,Jang Wook Choi
标识
DOI:10.1002/aenm.202404817
摘要
Abstract All‐solid‐state batteries (ASSBs) are emerging as promising candidates for next‐generation energy storage systems. However, their practical implementation faces significant challenges, particularly their requirement for an impractically high stack pressure. This issue is especially critical in high‐energy density systems with limited negative‐to‐positive electrode capacity ratios (N/P ratios), where uneven lithium (Li) stripping induces the formation of interfacial voids. This study addresses these challenges by introducing an anode with a novel structural design that operates effectively under practically viable conditions while significantly reducing the N/P ratio to less than one. The approach entails the integration of a lithiophilic magnesium (Mg) film beneath a thin layer of the silicon‐graphite (SiGr) active materials. This structure facilitates the deposition of excess Li beneath the SiGr layer during overcharging, which enables stable cycling even at room temperature and at a low stack pressure of 3 MPa. By mitigating the poor contact that is characteristic of ASSBs with a low stack pressure, and simultaneously increasing the energy density by lowering the N/P ratio, the design significantly advances the key electrochemical properties of ASSBs.
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