材料科学
纳米管
硅
纳米技术
蚀刻(微加工)
纳米线
锗
碳纳米管
模板
光电子学
图层(电子)
作者
Corey P. Fucetola,Justin T. Wang,Olurotimi A. Bolonduro,Charles M. Lieber,Brian P. Timko
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-01-16
卷期号:18 (4): 3775-3782
被引量:2
标识
DOI:10.1021/acsnano.3c11841
摘要
We report a general approach for the synthesis of single-crystal silicon nanotubes, involving epitaxial deposition of silicon shells on germanium nanowire templates followed by removal of the germanium template by selective wet etching. By exploiting advances in the synthesis of germanium nanowires, we were able to rationally tune the nanotube internal diameters (5-80 nm), wall thicknesses (3-12 nm), and taper angles (0-9°) and additionally demonstrated branched silicon nanotube networks. Field effect transistors fabricated from p-type nanotubes exhibited a strong gate effect, and fluid transport experiments demonstrated that small molecules could be electrophoretically driven through the nanotubes. These results demonstrate the suitability of silicon nanotubes for the design of nanoelectrofluidic devices.
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