材料科学
异质结
光致发光
光电子学
钙钛矿(结构)
堆积
响应度
光电探测器
外延
化学气相沉积
纳米技术
图层(电子)
结晶学
化学
物理
核磁共振
作者
Xing Xu,Chao Fan,Haiping He,Zhizhen Ye
标识
DOI:10.1021/acsami.3c19282
摘要
Perovskites have great potential for optoelectronic applications due to their high photoluminescence quantum yield, large absorption coefficient, great defect tolerance, and adjustable band gap. Perovskite heterostructures may further enhance the performance of optoelectronic devices. So far, however, most of perovskite heterostructures are fabricated by mechanical stacking or spin coating, which could introduce a large number of defects or impurities at the heterointerface owing to the random stacking process. Herein, we report the epitaxial growth of CsPbBr
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