毫秒
材料科学
薄脆饼
激光器
硅
辐照
光学
光电子学
物理
天文
核物理学
作者
Zhichao Jia,Wei Wang,Xinhua Li,Lingyun Hao
出处
期刊:Optical Engineering
[SPIE - International Society for Optical Engineering]
日期:2021-09-13
卷期号:60 (09)
被引量:3
标识
DOI:10.1117/1.oe.60.9.097101
摘要
The damage process of (001) silicon wafer subjected to millisecond Gaussian laser irradiation is investigated. The laser pulse width is 1 ms, and the laser energy density ranges from 18 to 32 J / cm2. The damage mechanism is discussed by combining real-time experimental observation with numerical analysis based on a dislocation model. The first damage is dislocation multiplication, which is induced by the long irradiation time of a millisecond laser. The subsequent melting process begins at slip lines, not the spot center as is usually assumed. Fracture also occurs outside the spot center. Precise temperature in the cooling period cannot be obtained by simulation due to complicated dependence of thermal conductivity on dislocation, which may be the most urgent problem in further studies.
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