Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes

A laminated structure of Al2O3 and MgO deposited by atomic layer deposition (ALD) is used to realize a thin film encapsulation technology in organic light-emitting diodes (OLEDs). This film was targeted to achieve an excellent barrier performance. As the thickness of MgO layer increased from 0 nm to 20 nm, its physical properties transformed from the amorphous state into a crystalline state. The optimized cyclic ratio of ALD Al2O3 and MgO exhibited much lower water vapor transmission rate (WVTR) of 4.6 × 10−6 gm−2/day evaluated by Calcium (Ca) corrosion at 60 °C&100% RH, owing to the formation of a terrific laminated structure. Top-emitting OLEDs encapsulated with laminated Al2O3/MgO show longer operating lifetime under rigorous environmental conditions. These improvements were attributed to the embedded MgO film that served as a modified layer to establish a laminated structure to obstruct gas permeation, as well as a scavenger to absorb water molecules, thus alleviating the hydrolysis of bulk Al2O3 material.