异质结
材料科学
带偏移量
光电子学
单层
光致发光
外延
超晶格
双层
堆积
带隙
纳米技术
化学
图层(电子)
价带
有机化学
生物化学
膜
作者
Bo Li,Le Huang,Mianzeng Zhong,Yan Li,Yan Wang,Jingbo Li,Zhongming Wei
标识
DOI:10.1002/aelm.201600298
摘要
2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most 2D heterostructures are formed by transfer‐stacking two monolayers together, but the interfacial quality and controllable orientation of such artificial structures are inferior to those epitaxial grown heterostructures. Herein, for the first time, a direct vapor phase growth of high‐quality vertically stacked heterostructure of SnS 2 /MoS 2 monolayers is reported. An extremely Type II band alignment exists in this 2D heterostructure, with band offset larger than any other reported. Consistent with the large band offset, distinctive optical properties including strong photoluminescence quenching in the heterostructure area are observed in the heterostructure. The SnS 2 /MoS 2 heterostructures also exhibit well‐aligned lattice orientation between the two layers, forming a periodic Moiré superlattice pattern with high lattice mismatch. Electrical transport and photoresponsive studies demonstrate that the SnS 2 /MoS 2 heterostructures exhibit an obvious photovoltaic effect and possess high on/off ratio (>10 6 ), high mobility (27.6 cm 2 V −1 s −1 ) and high photoresponsivity (1.36 A W −1 ). Efficient synthesis of such vertical heterostructure may open up new realms in 2D functional electronics and optoelectronics.
科研通智能强力驱动
Strongly Powered by AbleSci AI