Cubic Silicon Carbide: Growth, Properties, and Electrochemical Applications

This chapter discusses the physical and mechanical properties of silicon carbide (SiC) films and their related nanostructures as well as their applications in the fields of electronics, power devices, and biomedical applications. It summarizes growth of cubic-SiC (3C-SiC) using various chemical vapor deposition (CVD) techniques. After the description of the interfacial properties (e.g. surface morphology, surface chemistry, and electrochemical properties) of 3C-SiC, the chapter highlights the electrochemical applications of 3C-SiC films in the fields of electrochemical and biochemical sensing, energy storage and conversion. Crystalline SiC synthesized by the Acheson process features different polytypes and varies in its purity. 3C-SiC films feature wide potential windows, stable capacitance currents, and good electrochemical response toward electroactive species. Therefore, they have been employed as the electrode materials for various electrochemical applications. More detailed and in-depth studies are still required in order to explore various SiC films and nanostructures for different applications.