正交晶系
吸收边
单晶
吸收(声学)
GSM演进的增强数据速率
吸收带
化学
Crystal(编程语言)
吸收光谱法
结晶学
性格(数学)
凝聚态物理
材料科学
物理
光学
带隙
晶体结构
电信
计算机科学
数学
程序设计语言
几何学
作者
J. D. Wiley,A. Breitschwerdt,E. Schönherr
标识
DOI:10.1016/0038-1098(75)90311-7
摘要
The absorption band edge of single-crystal orthorhombic GeS has been measured in all three polarizations at 4.2, 77 and 300°K. Strong excitonic absorption is observed for E ∥ a, and the transitions in this direction are identified as direct-allowed. Transitions in the E ∥ b and E ∥ c polarizations are tentatively identified as direct forbidden and direct allowed, respectively, with values for Eg similar to those found for E ∥ a. Evidence for the partially two-dimenśional character of GeS is discussed.
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