材料科学
辐照
氧化物
抗辐射性
半导体
氧气
粒度
金属
晶粒生长
辐射耐受性
辐射
辐射损伤
化学工程
光电子学
化学
冶金
光学
核物理学
有机化学
工程类
放射治疗
内科学
物理
医学
作者
Tongshan Lu,Jinpeng Lv,Chenghua Wang
标识
DOI:10.1016/j.jallcom.2021.163135
摘要
• The influences of hydrogenation on radiation resistance of ZnO, Ga 2 O 3 and TiO 2 are explored. • Hydrogenation leads to weaker grain growth and higher radiation tolerance in Ga 2 O 3 . • Both of grain size and oxygen deficient defects contribute to radiation tolerance of oxide semiconductors. Synthesizing metal oxide semiconductors with radiation hardness are of significance for their potential application in harsh radiative environments. Herein, ZnO, Ga 2 O 3 and TiO 2 , which have different cation/anion stoichiometric ratio, are reductive annealed to explore the influence of hydrogenation on radiation resistance of oxide semiconductors, combined with comprehensive characterizations. Results found that while hydrogenation created massive O-deficient defects in all of the three oxides, distinct grain growth and aggregation are only appeared in ZnO and in TiO 2 . Interestingly, compared with the slightly augmented radiation stability of ZnO and TiO 2 after hydrogenation, prominent improvement of the radiation stability of Ga 2 O 3 is observed. Detailed analysis illustrated that the enhancement of radiation tolerance in hydrogenated Ga 2 O 3 can be attributed to the introduction of O-deficient defects, whereas in ZnO and in TiO 2 the contribution of O-deficient defects to the radiation hardness are offset considerably by the reduction of grain surfaces/interfaces, which also acts as energy sink during irradiation. Therefore, we conclude that both of grain size and oxygen deficient defects play vital roles in tuning the radiation tolerance of metal oxide semiconductors
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