X射线光电子能谱
费米能级
价带
材料科学
兴奋剂
价(化学)
分析化学(期刊)
螺旋钻
带隙
化学
原子物理学
核磁共振
光电子学
物理
电子
有机化学
量子力学
色谱法
作者
Guangwei Cong,Wenqin Peng,Hongyuan Wei,Xiaofei Han,J. J. Wu,X. L. Liu,Qinghua Zhu,Z. G. Wang,J. G. Lu,Z. Z. Ye,Li Zhu,Haolei Qian,Ping Peng,Hong Chen,Jiasong Zhong,Kurash Ibrahim,Ting-How Hu
摘要
The valence band structures of Al–N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al–N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al–N increased the relative quantity of Zn–N in ZnO:(Al, N), while N–N decreased that of Zn–N in ZnO:N.
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