蚀刻(微加工)
反应离子刻蚀
吸附
溅射
等离子体
硅
图层(电子)
等离子体刻蚀
离子
分子
化学
分析化学(期刊)
材料科学
薄膜
纳米技术
物理化学
环境化学
光电子学
有机化学
物理
量子力学
出处
期刊:Vacuum
[Elsevier]
日期:2012-07-01
卷期号:86 (12): 1964-1968
被引量:4
标识
DOI:10.1016/j.vacuum.2012.05.005
摘要
The plasma chemical etching (PCE) of Si in CF4 + O2 plasma is considered. The concentrations of plasma components are calculated using values extrapolated from experimental data. Resulting calculations of plasma components are used for the calculation of Si etching rates. The concentrations of the adsorbed layer and surface components, obtained from analysis of PCE of silicon, are used for the comparison of site-balance and adsorbed-layer models. It is found that adsorbed-layer model predicts higher concentration of SiO2 molecules on the surface than site-balance model. The difference in SiO2 concentration is important during ion-beam-assisted etching and reactive ion etching processes as the models predict different etching rates due to different sputtering yields of Si atoms and SiO2 molecules.
科研通智能强力驱动
Strongly Powered by AbleSci AI