Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors

As the characteristics of insulted gate transistors [like metal–oxide–semiconductor field-effect transistors and insulated gate bipolar transistors (IGBTs)] have been constantly improving, their utilization in power converters operating at higher and higher frequencies has become more common. However, this, in turn, leads to fast current and voltage transitions that generate large amounts of electromagnetic interferences over wide frequency ranges. In this paper, a new active gate voltage control (AGVC) method is presented. It allows us to control the values of at turn-on and at turn-off for insulated gate power transistors, by acting directly on the input gate voltage shape. In an elementary switching cell, it enables us to strongly reduce over-current generated by the reverse recovery of the free-wheeling diode at turn-on, and oscillations of the output voltage across the transistor at turn-off. In the following sections, the AGVC in open and closed-loop for IGBT is presented, and its performance is compared with that of a more conventional method, i.e., increasing the gate resistance. Robustness of the AGVC is estimated under variations of dc-voltage supply and transistor switched current.