硫系化合物
无定形固体
阈值电压
材料科学
硫系玻璃
相变存储器
非晶半导体
光电子学
电压
领域(数学)
瞬态(计算机编程)
电场
工程物理
电子工程
纳米技术
电气工程
物理
计算机科学
化学
硅
结晶学
工程类
晶体管
数学
纯数学
图层(电子)
操作系统
量子力学
作者
A. Pirovano,Andrea L. Lacaita,F. Pellizzer,S. A. Kostylev,A. Benvenuti,R. Bez
标识
DOI:10.1109/ted.2004.825805
摘要
A detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change memory devices is presented. It is observed that both R/sub off/ and V/sub th/ increase and become stable with time and temperature, thus improving the cell readout window. Relying on a microscopic model, the drift of R/sub off/ and V/sub th/ is linked to the dynamic of the intrinsic traps typical of amorphous chalcogenides, thus providing for the first time a unified framework for the comprehension of chalcogenide materials transient behavior.
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