Hole-induced insulator-to-metal transition inLa1−xSrxCrO3epitaxial films

材料科学 费米能级 凝聚态物理 光电发射光谱学 价(化学) 光谱学 兴奋剂 X射线光电子能谱 化学 物理 电子 核磁共振 量子力学 有机化学
作者
K. H. L. Zhang,Yingge Du,Peter V. Sushko,Mark Bowden,V. Shutthanandan,Shawn Sallis,Louis F. J. Piper,Scott A. Chambers
出处
期刊:Physical Review B [American Physical Society]
卷期号:91 (15) 被引量:91
标识
DOI:10.1103/physrevb.91.155129
摘要

We have investigated the evolution of the electronic properties of $\mathrm{L}{\mathrm{a}}_{1\ensuremath{-}x}\mathrm{S}{\mathrm{r}}_{x}\mathrm{Cr}{\mathrm{O}}_{3}\phantom{\rule{0.16em}{0ex}}(0\ensuremath{\le}x\ensuremath{\le}1)$ epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. $\mathrm{LaCr}{\mathrm{O}}_{3}$ is an antiferromagnetic insulator, whereas $\mathrm{SrCr}{\mathrm{O}}_{3}$ is a metal. Substituting $\mathrm{S}{\mathrm{r}}^{2+}$ for $\mathrm{L}{\mathrm{a}}^{3+}$ in $\mathrm{LaCr}{\mathrm{O}}_{3}$ effectively dopes holes into the top of valence band, leading to $\mathrm{C}{\mathrm{r}}^{4+}$ (${3d}^{2}$) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing $x$, indicating downward movement of the Fermi level toward the valence band maximum. The material becomes a $p$-type semiconductor at lower doping levels and an insulator-to-metal transition is observed at $x\ensuremath{\ge}0.65$, but only when the films are deposited with in-plane compression via lattice-mismatched heteroepitaxy. Valence-band x-ray photoemission spectroscopy reveals diminution of electronic state density at the $\mathrm{Cr}\phantom{\rule{0.16em}{0ex}}d\phantom{\rule{0.16em}{0ex}}{t}_{2g}$-derived top of the valence band, while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into $\mathrm{LaCr}{\mathrm{O}}_{3}$. The evolution of these bands with Sr concentration is accurately captured using density functional theory (DFT) with a Hubbard U correction of 3.0 eV $(\mathrm{DFT}+U)$. Resistivity data in the semiconducting regime $(x\ensuremath{\le}0.50)$ do not fit perfectly well to either a polaron hopping or band conduction model but are best interpreted in terms of a hybrid model. The activation energies extracted from these fits are well reproduced by $\mathrm{DFT}+U$.
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