钻石
高电子迁移率晶体管
材料科学
可靠性(半导体)
光电子学
宽禁带半导体
基质(水族馆)
氮化镓
工程物理
电子工程
功率(物理)
纳米技术
冶金
电气工程
晶体管
工程类
图层(电子)
物理
电压
地质学
海洋学
量子力学
作者
Tadatomo Suga,Fengwen Mu
标识
DOI:10.1109/ectc32862.2020.00210
摘要
GaN-diamond integration is being paid far more attention to realize a better thermal management of GaN-HEMT device GaN-HEMT device with the increase of the requirements on high power density and high reliability. Although growth method has been widely investigated, novel bonding method bring new possibility to realize GaN-diamond integration without traditional problems. This paper reviewed the previous bonding researches for GaN-diamond integration.
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