材料科学
退火(玻璃)
极性(国际关系)
异质结
溅射
外延
光电子学
氮化物
半导体
图层(电子)
纳米技术
薄膜
复合材料
化学
生物化学
细胞
作者
Kanako Shojiki,Kenjiro Uesugi,Shiyu Xiao,Hideto Miyake
标识
DOI:10.1016/j.mssp.2023.107736
摘要
III-nitride semiconductors have crystallographic polarity; therefore, controlling the polarity of these materials can realize novel device structures. However, this has been difficult to achieve while also controlling the thickness of each layer with different polarity without increasing the threading dislocation densities (TDDs) in conventional epitaxial growth methods. By combining the high-temperature face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) and oxygen impurity control near the interface, in this study we actively controlled FFA Sp-AlN to produce either N-polarity or Al-polarity. Moreover, we combined this polarity control method with the double sputtering and annealing method to achieve vertical polarity heterostructures that have controllable layer thickness without increasing the TDDs.
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