Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

The Gr/α-Ga 2 O 3 ↑ and Gr/α-Ga 2 O 3 ↓ vdWHs exhibit n-type Schottky contacts with a minimal Schottky barrier height of 0.043 eV and n-type Ohmic contacts, respectively.