云纹
凝聚态物理
材料科学
石墨
石墨烯
范德瓦尔斯力
薄膜
单层
Crystal(编程语言)
纳米技术
光学
物理
复合材料
量子力学
程序设计语言
计算机科学
分子
作者
Dacen Waters,Ellis Thompson,Esmeralda Arreguin-Martinez,Manato Fujimoto,Yafei Ren,Kenji Watanabe,Takashi Taniguchi,Ting Cao,Di Xiao,Matthew Yankowitz
出处
期刊:Nature
[Springer Nature]
日期:2023-07-19
卷期号:620 (7975): 750-755
被引量:7
标识
DOI:10.1038/s41586-023-06290-3
摘要
Moiré patterns formed by stacking atomically thin van der Waals crystals with a relative twist angle can give rise to notable new physical properties1,2. The study of moiré materials has so far been limited to structures comprising no more than a few van der Waals sheets, because a moiré pattern localized to a single two-dimensional interface is generally assumed to be incapable of appreciably modifying the properties of a bulk three-dimensional crystal. Here, we perform transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal. We find that the moiré potential transforms the electronic properties of the entire bulk graphitic thin film. At zero and in small magnetic fields, transport is mediated by a combination of gate-tuneable moiré and graphite surface states, as well as coexisting semimetallic bulk states that do not respond to gating. At high field, the moiré potential hybridizes with the graphitic bulk states due to the unique properties of the two lowest Landau bands of graphite. These Landau bands facilitate the formation of a single quasi-two-dimensional hybrid structure in which the moiré and bulk graphite states are inextricably mixed. Our results establish twisted graphene–graphite as the first in a new class of mixed-dimensional moiré materials. Transport measurements of dual-gated devices constructed by slightly rotating a monolayer graphene sheet atop a thin bulk graphite crystal are performed, showing that moiré potential transforms the electronic properties of an entire graphitic thin film.
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